Compensation defects in annealed undoped liquid encapsulated Czochralski InP

Compensation defects in annealed undoped liquid encapsulated Czochralski InP

Effect of Stress on Creation of Defects in Annealed Czochralski Grown Silicon

The effect of stress (exerted by hydrostatic pressure of argon ambient enhanced up to 1.2 GPa) on the creation of oxygen-related defects in annealed Czochralski grown silicon (Cz-Si) was investigated. Concentrations of oxygen interstitials and of dislocations in Cz-Si samples with before-created nucleation centres for oxygen precipitation were markedly lower after pressure treatment at 1120 to ...

Positron-annihilation study of compensation defects in InP

Electrical conduction in annealed semi-insulating InP

Impurity–vacancy defects in implanted float-zone and Czochralski-Si

w The dual implantation method developed for defect engineering O.W. Holland, L. Xie, B. Nelson, D.S. Zhou, J. Ž . x q Electron. Mater. 25 1996 99 uses an amorphizing implant in conjunction with high energy Si -ion implantation to inject vacancies. Following annealing of the implanted samples for 20 min at 6008C and at 8008C, the amorphous layer Ž . recrystallizes by solid-phase epitaxial growt...